
Prof Wei Zhang
School of Engineering
Faculty of Engineering and Technology
Email: W.Zhang@ljmu.ac.uk
Telephone: 0151 231 2868
● Professor of Nanoelectronics.
● Leader of the memory devices research at LJMU, including resistive switching memory and Flash memory devices and threshold switching devices, for applications in the field of non-volatile memory, in-memory computing, and neuromorphic computing.
● Leader of the collaboration with the world-leading IMEC Memory Device Consortium including Intel, Micron, Samsung, Hynix, Toshiba and SanDisk.
● Principal investigator and co-investigator of a number of research projects with a total value of more than £4.5 million, including:
• Eight EPSRC research grants on RRAM, MOSFETs, Variability, and SILC.
• Four official collaboration agreements with IMEC on RRAM and 3D Flash memory.
• One HEFCE Promising Researcher Grant.
● Research outputs are rated as international excellence and above in Research Excellence Framework (REF) 2021, with one Impact Case Study also rated as international excellence and above.
● Published over one hundred fifty papers predominantly in benchmarking journals for REF and flagship international conferences such as IEEE Transactions, IEDM, VLSI and IRPS.
● Supervisor of fourteen PhD students.
Degrees
Liverpool John Moores University, United Kingdom, PhD
Academic appointments
Professor of Nanoelectronics, Department of Electronics and Electrical Engineering, Liverpool John Moores University, 2014 - present
Highlighted publications
Hu Z, Wang G, Chai Z, Zhang W, Garbin D, Degraeve R, Clima S, Ravsher T, Fantini A, Zhang J, Belmonte A, Kar G. 2024. Understanding the Variability in GeAsTe Ovonic Threshold Switching Devices 2024 IEEE International Electron Devices Meeting (IEDM), International Electron Device Meeting 2024 DOI Publisher Url Public Url
Xue F, He X, Wang Z, Retamal JRD, Chai Z, Lingling J, Chenhui Z, Fang H, Chai Y, Zhang WD, Alshareef H, Ji Z, Li L-J, He J-H, Zhang X. 2021. Giant ferroelectric resistance switching controlled by a modulatory terminal for low-power neuromorphic in-memory computing Advanced Materials, 33 DOI Author Url Publisher Url Public Url
Joksas D, Freitas P, Chai Z, Ng WH, Buckwell M, Li C, Zhang WD, Xia QF, Kenyon AJ, Mehonic A. 2020. Committee Machines—A Universal Method to Deal with Non-Idealities in Memristor-Based Neural Networks Nature Communications, 11 DOI Author Url Publisher Url Public Url
Chai Z, Freitas P, Zhang WD, Hatem F, Degraeve R, Clima S, Zhang J, Marsland J, Fantini A, Garbin D, Goux L, Kar G. 2020. Stochastic computing based on volatile GeSe ovonic threshold switching selectors IEEE Electron Device Letters, DOI Author Url Publisher Url Public Url
Chai Z, Wei S, Zhang WD, Brown J, Degraeve R, Salim F, Clima S, Hatem F, Zhang JF, Freitas P, Marsland J, Fantini A, Garbin D, Goux L, Kar G. 2019. GeSe-based Ovonic Threshold Switching Volatile True Random Number Generator IEEE Electron Device Letters, DOI Author Url Publisher Url Public Url
Hatem F, Chai Z, Zhang WD, Fantini A, Degraeve R, Clima S, Garbin D, Robertson J, Guo Y, Zhang JF, Marsland J, Freitas P, Goux L, Kar G. 2019. Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme 2019 IEEE International Electron Devices Meeting (IEDM), IEEE International Electron Device Meeting (IEDM) DOI Author Url Publisher Url Public Url
Chai Z, Zhang W, Degraeve R, Clima S, Hatem F, Zhang JF, Freitas P, Marsland J, Fantini A, Garbin D, Goux L, Kar G. 2019. Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors 2019 Symposium on VLSI Technology, 2019 Symposia on VLSI Technology and Circuits DOI Author Url Publisher Url Public Url
Chai Z, Freitas P, Zhang WD, Hatem F, Zhang JF, Marsland J, Govoreanu B, Goux L, Kar GS. 2018. Impact of RTN on Pattern Recognition Accuracy of RRAM-based Synaptic Neural Network IEEE Electron Device Letters, DOI Author Url Publisher Url Public Url
Ma J, Chai Z, Zhang WD, Govoneanu B, Zhang JF, Ji Z, Benbakhti B, Groeseneken G, Jurczak M. 2017. Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement Technical Digest - International Electron Devices Meeting, IEEE International Electron Devices Meeting DOI Author Url Publisher Url Public Url
Chai Z, Ma J, Zhang WD, Govoreanu B, Simoen E, Zhang JF, Ji Z, Gao R, Groeseneken G, Jurczak M. 2016. RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism Digest of Technical Papers - Symposium on VLSI Technology, IEEE 2016 Symposia on VLSI Technology and Circuits DOI Author Url Publisher Url Public Url
Journal article
Yuan X, Chai Z, Zhou X, Luo Y, He Y, Jian J, Yue X, Zhang JF, Zhang W, Min T. 2025. Hardware Estimation for the Eigenvectors of Stochastic Matrices using Magnetic Tunnel Junctions IEEE Electron Device Letters, 46 :500-503 DOI Publisher Url Public Url
Xue S, Zhao N, Zhang W, Luo B, Liu D. 2025. A Hybrid Adaptive Dynamic Programming for Optimal Tracking Control of USVs IEEE Transactions on Neural Networks and Learning Systems, DOI Author Url Publisher Url
Hong Y, Zheng X, He Y, Zhang H, Zhang W, Zhang J, Ma X, Hao Y. 2025. Effect of p-NiO
Jian J, Yuan X, Chai Z, Zhou X, Luo Y, He Y, Yue X, Zhang JF, Zhang W, Min T. 2024. Bipolar Random Signal Generation with Electrical Operation Based on Two Magnetic Tunnel Junctions IEEE Electron Device Letters, 46 :171-174 DOI Publisher Url Public Url
Wu Y, Ma X, Yu L, Feng X, Zhao S, Zhang W, Zhang J, Hao Y. 2024. High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate. Micromachines, 15 :1-8 DOI Author Url Publisher Url Public Url
Hong Y, Zheng X, Zhang H, He Y, Zhu T, Zhang W, Zhang J, Ma X, Hao Y. 2024. Fröhlich Scattering Effects on Electron Mobility in β-Ga
Yue S, Zheng X, Zhang F, Lin D, Bu S, Wang Y, Hu P, Liu J, Zhang W, Zhang J, Ma X, Hao Y. 2024. Study on the electrical performance degradation mechanism of β-Ga
Yue S, Zheng X, Zhang F, Hong Y, Wang Y, Zhu T, Gong S, Wang X, Lv L, Cao Y, Zhang W, Zhang J, Ma X, Hao Y. 2024. Investigation on Electrical Performance Degradation Mechanism of β-GaO Schottky Barrier Diodes Under 3 MeV Proton Radiation IEEE Transactions on Electron Devices, 71 :4584-4589 DOI Publisher Url
Zhang H, Zheng X, Lin D, Hong Y, Zhou J, Lv L, Cao Y, Han H, Zhang W, Zhang J, Ma X, Hao Y. 2024. Study on the Degradation Mechanism of GaN MMIC Power Amplifiers under on-state with High Drain Bias IEEE Transactions on Electron Devices, :1-5 DOI Publisher Url Public Url
Hong Y, Zheng X, Zhang H, He Y, Zhu T, Liu K, Li A, Ma X, Zhang W, Zhang J, Hao Y. 2024. Oxygen Stoichiometry Engineering in P-Type NiOx for High-Performance NiO/Ga2O3 Heterostructure p–n Diode Physica Status Solidi - Rapid Research Letters, DOI Publisher Url
Yuan X, Jian J, Chai Z, Wei H, Zhou X, Wen Y, Liu Y, Yan W, He Y, Zhang JF, Zhang W, Min T. 2024. Arbitrary Modulation of Average Dwell Time in Discrete-Time Markov Chains based on Tunneling Magnetoresistance Effect IEEE Electron Device Letters, DOI Publisher Url Public Url
Gu Y, Hu Z, Zhao Y, Liao J, Zhang W. 2024. MFGTN: A multi-modal fast gated transformer for identifying single trawl marine fishing vessel Ocean Engineering, 303 DOI Publisher Url
Wang Y, Yu G, Xie W, Zhang W, Silvestre C. 2024. Robust Cooperative Transportation of a Cable-Suspended Payload by Multiple Quadrotors Featuring Cable-Reconfiguration Capabilities IEEE Transactions on Intelligent Transportation Systems, 25 :11833-11843 DOI Publisher Url
Jia Z, Zhang K, Shi Y, Zhang W. 2024. Safety-Preserving Lyapunov-Based Model Predictive Rendezvous Control for Heterogeneous Marine Vehicles Subject to External Disturbances IEEE Transactions on Cybernetics, 54 :5244-5256 DOI Author Url Publisher Url
Cang N, Guo D, Zhang W, Shen L, Li W. 2024. A new discrete-time repetitive motion planning scheme based on pseudoinverse formulation for redundant robot manipulators with joint constrains Robotics and Autonomous Systems, 176 DOI Publisher Url
Xie T, Hu Z, Zhang W, Chen H. 2024. Fault Diagnosis for Multi-Phase Inverters: A Telescoping Modulus Approach with Convolutional Neural Networks IEEE Transactions on Circuits and Systems II: Express Briefs, 71 :4371-4375 DOI Publisher Url
Cang N, Tang H, Guo D, Zhang W, Li W, Li X. 2024. Discrete-time zeroing neural network with quintic error mode for time-dependent nonlinear equation and its application to robot arms Applied Soft Computing, 157 DOI Publisher Url
Zhang H, Zheng X, Lin D, Lv L, Cao Y, Hong Y, Zhang F, Wang X, Wang Y, Zhang W, Zhang J, Ma X, Hao Y. 2024. Study on the single-event burnout mechanism of GaN MMIC power amplifiers Applied Physics Letters, 124 DOI Publisher Url Public Url
Zhang Y, Wu W, Chen W, Lu H, Zhang W. 2024. Output-Feedback Consensus Maneuvering of Uncertain MIMO Strict-Feedback Multiagent Systems Based on a High-Order Neural Observer IEEE Transactions on Cybernetics, 54 :4111-4123 DOI Author Url Publisher Url
Wu W, Zhang Y, Li Z, Lu JG, Zhang W. 2024. Constrained Safe Cooperative Maneuvering of Autonomous Surface Vehicles: A Control Barrier Function Approach IEEE Transactions on Systems, Man, and Cybernetics: Systems, 55 :73-84 DOI Publisher Url
Xie W, Yu G, Cabecinhas D, Silvestre C, Zhang W, He W. 2024. Robust collision-free formation control of quadrotor fleets: Trajectory generation and tracking with experimental validation Control Engineering Practice, 145 DOI Publisher Url
Ye H, Cheng P, Zhang W. 2024. Finite-time H∞ control for USVs subject to DoS attacks: a chattering-free sliding mode control approach Nonlinear Dynamics, 112 :3573-3590 DOI Publisher Url
Hou M, Chen F, Jiao J, Pei F, Li Y, Zhang W. 2023. Multi-response optimization of ejector for proton exchange membrane fuel cell anode systems by the response surface methodology and desirability function approach International Journal of Green Energy, 21 :1910-1927 DOI Publisher Url
Du B, Xie W, Li Y, Yang Q, Zhang W, Negenborn RR, Pang Y, Chen H. 2023. Safe Adaptive Policy Transfer Reinforcement Learning for Distributed Multiagent Control IEEE Transactions on Neural Networks and Learning Systems, 36 :1939-1946 DOI Author Url Publisher Url
Brown J, Tok KH, Gao R, Ji Z, Zhang W, Marsland JS, Chiarella T, Franco J, Kaczer B, Linten D, Zhang JF. 2023. A Pragmatic Model to Predict Future Device Aging IEEE Access, 11 :127725-127736 DOI Publisher Url Public Url
Du B, Xie W, Zhang W, Chen H. 2023. A Target Tracking Guidance for Unmanned Surface Vehicles in the Presence of Obstacles IEEE Transactions on Intelligent Transportation Systems, 25 :4102-4115 DOI Publisher Url
Li J, Zhang G, Zhang X, Zhang W. 2023. Integrating Dynamic Event-Triggered and Sensor-Tolerant Control: Application to USV-UAVs Cooperative Formation System for Maritime Parallel Search IEEE Transactions on Intelligent Transportation Systems, 25 :3986-3998 DOI Publisher Url
Xie T, Zhang W, Tang Y, Chen H. 2023. A Physical-Feature Interactive Expansion-Based Fault Diagnosis Method With Applications to Marine Current Turbines IEEE Transactions on Industrial Electronics, 71 :9677-9686 DOI Publisher Url
Yuan X, Jian J, Chai Z, An S, Gao Y, Zhou X, Zhang JF, Zhang W, Min T. 2023. Markov Chain Signal Generation based on Single Magnetic Tunnel Junction IEEE Electron Device Letters, :1-1 DOI Publisher Url Public Url
Silva C, Deuermeier J, Zhang W, Carlos E, Barquinha P, Martins R, Kiazadeh A. 2023. Perspective: Zinc-Tin Oxide Based Memristors for Sustainable and Flexible In-Memory Computing Edge Devices Advanced Electronic Materials, DOI Publisher Url Public Url
Lin B, Xie W, Shi Y, Du B, Zhang C, Zhang W. 2023. Robust Target Interception Strategy for a USV With Experimental Validation IEEE Robotics and Automation Letters, 8 :7042-7049 DOI Publisher Url
Li J, Zhang G, Jiang C, Zhang W. 2023. A survey of maritime unmanned search system: Theory, applications and future directions Ocean Engineering, 285 DOI Publisher Url
Zhang G, Han J, Zhang W, Yin Y, Zhang L. 2023. Finite-time adaptive event-triggered control for USV with COLREGS-compliant collision avoidance mechanism Ocean Engineering, 285 DOI Publisher Url
Cheng P, Chen H, He S, Zhang W. 2023. Asynchronous Deconvolution Filtering for 2-D Markov Jump Systems with Packet Loss Compensation IEEE Transactions on Automation Science and Engineering, 21 :4165-4176 DOI Publisher Url
Shi Y, Wang Y, Xie W, Chen W, Zhang W. 2023. Modeling and robust quantitative control for AUV-tow-load system Ocean Engineering, 284 DOI Publisher Url
Shi Y, Xie W, Xiong M, Zhang W. 2023. Neural Adaptive Quantitative Prescribed Performance Sectionalized Event-Triggered Control for Autonomous Underwater Vehicles IEEE Transactions on Intelligent Transportation Systems, 24 :10857-10868 DOI Publisher Url
Qiu F, Zhang W. 2023. AUV-Aided joint time synchronization and localization of underwater target with propagation speed uncertainties Ocean Engineering, 283 DOI Publisher Url
Xie T, Zhang W, Li F, Ahmed Z. 2023. Impact fault detection for marine current turbines blade via MEGK-means and PCA under variable marine conditions Measurement Science and Technology, 34 DOI Publisher Url
Zhang G, Bian W, Li J, Zhang W. 2023. Robust adaptive synchronized event-triggered formation control of USVs with the fault amendment strategy Ocean Engineering, 281 DOI Publisher Url
Pan W, Xu X, Lu Y, Zhang W. 2023. Distributed Nash Equilibrium Learning for Average Aggregative Games: Harnessing Smoothness to Accelerate the Algorithm IEEE Systems Journal, 17 :4855-4865 DOI Publisher Url
Zhang G, Shang X, Liu J, Zhang W. 2023. Improved iterative learning path-following control for USV via the potential-based DVS guidance Ocean Engineering, 280 DOI Publisher Url
Ye H, Cheng P, Zhang X, He S, Zhang W. 2023. Event-triggered-based H∞ control for Markov jump cyber-physical systems against denial-of-service attacks Applied Mathematics and Computation, 451 DOI Publisher Url
Shi Y, Xie W, Chen W, Xing L, Zhang W. 2023. Neural Adaptive Intermittent Output Feedback Control for Autonomous Underwater Vehicles With Full-State Quantitative Designs IEEE Transactions on Neural Networks and Learning Systems, 35 :12836-12848 DOI Author Url Publisher Url
Ruan S, Vilanova R, Zhang W. 2023. Robust 2DoF PI tuning rules for integrating processes with dead time via frequency response model matching Journal of the Franklin Institute, 360 :6232-6252 DOI Publisher Url
Li Y, Li S, Zhang Y, Zhang W, Lu H. 2023. Dynamic Route Planning for a USV-UAV Multi-Robot System in the Rendezvous Task with Obstacles Journal of Intelligent and Robotic Systems: Theory and Applications, 107 DOI Publisher Url
Li X, Lu D, Zhang W. 2023. Asynchronous fault detection filtering for Markovian jump systems with output sensor saturation ISA Transactions, 135 :233-243 DOI Author Url Publisher Url
Qiu F, Zhang W. 2023. Efficient cooperative localization method with node selection based on position error bound Signal Processing, 209 DOI Publisher Url
Shi Y, Xie W, Zhang G, Dong H, Zhang W. 2023. Event-Triggered Saturation-Tolerant Control for Autonomous Underwater Vehicles with Quantitative Transient Behaviors IEEE Transactions on Vehicular Technology, 72 :9857-9867 DOI Publisher Url
Zhang G, Chang T, Wang W, Zhang W. 2023. Hybrid threshold event-triggered control for sail-assisted USV via the nonlinear modified LVS guidance Ocean Engineering, 276 DOI Publisher Url
Tok KH, Zhang J, Brown J, Ji Z, Zhang W, Marsland J. 2023. Characterizing and Modelling RTN under real circuit bias conditions IEEE Transactions on Electron Devices, 70 :2424-2430 DOI Publisher Url Public Url
Hu Z, Zhang W, Degraeve R, Garbin D, Chai Z, Saxena N, Freitas P, Fantini A, Ravsher T, Clima S, Zhang J, Delhougne R, Goux L, Kar G. 2022. New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors IEEE Transactions on Electron Devices, DOI Publisher Url Public Url
Tao W, Zhu M, Chen S, Cheng X, Wen Y, Zhang W, Negenborn RR, Pang Y. 2022. Coordination and Optimization Control Framework for Vessels Platooning in Inland Waterborne Transportation System IEEE Transactions on Intelligent Transportation Systems, 24 :15667-15686 DOI Publisher Url
Cao G, Li Z, Yang Y, Zhang W. 2022. Barrier Function-based adaptive fast non-singular terminal sliding mode tracking control for marine vessels Ocean Engineering, 266 DOI Publisher Url
Li J, Zhang G, Shan Q, Zhang W. 2022. A Novel Cooperative Design for USV-UAV Systems: 3-D Mapping Guidance and Adaptive Fuzzy Control IEEE Transactions on Control of Network Systems, 10 :564-574 DOI Publisher Url
Wu W, Zhang Y, Zhang W, Xie W. 2022. Distributed finite-time performance-prescribed time-varying formation control of autonomous surface vehicles with saturated inputs Ocean Engineering, 266 DOI Publisher Url
Xiao Z, Su Y, Deng Z, Zhang W. 2022. Efficient Combination of CNN and Transformer for Dual-Teacher Uncertainty-guided Semi-supervised Medical Image Segmentation Computer Methods and Programs in Biomedicine, 226 DOI Author Url Publisher Url
Cheng P, He S, Dong H, Chen W, Zhang W. 2022. Extended state observer-based finite-region control for 2-D Markov jump systems International Journal of Robust and Nonlinear Control, 33 :1010-1026 DOI Publisher Url
Zhang G, Yao M, Shan Q, Zhang W. 2022. Observer-based asynchronous self-triggered control for a dynamic positioning ship with the hysteresis input Science China Information Sciences, 65 DOI Publisher Url
Zhang H, Wang Q, Zhang W, Havlin S, Gao J. 2022. Estimating comparable distances to tipping points across mutualistic systems by scaled recovery rates Nature Ecology and Evolution, 6 :1524-1536 DOI Author Url Publisher Url
Wu W, Zhang Y, Zhang W, Xie W. 2022. Output-Feedback Finite-Time Safety-Critical Coordinated Control of Path-Guided Marine Surface Vehicles Based on Neurodynamic Optimization IEEE Transactions on Systems, Man, and Cybernetics: Systems, 53 :1788-1800 DOI Publisher Url
Tok KH, Zhang JF, Brown J, Ye Z, Ji Z, Zhang WD, Marsland JS. 2022. AC RTN: Testing, Modeling, and Prediction IEEE Transactions on Electron Devices, :1-7 DOI Publisher Url Public Url
Du Y, Shao W, Chai Z, Zhao H, Diao Q, Gao Y, Yuan X, Wang Q, Li T, Zhang WD, Zhang JF, Min T. 2022. Synaptic 1/f noise injection for overfitting suppression in hardware neural networks Neuromorphic Computing and Engineering, 2 DOI Publisher Url Public Url
Golestani M, Zhang W, Yang Y, Xuan-Mung N. 2022. Disturbance Observer-Based Constrained Attitude Control for Flexible Spacecraft IEEE Transactions on Aerospace and Electronic Systems, 59 :963-972 DOI Publisher Url
Liu ZG, Dong H, Chen W, Zhang W. 2022. Two unified adaptive control approaches of uncertain delayed nonlinear systems Journal of the Franklin Institute, 359 :7438-7457 DOI Publisher Url
Dong B, Lu Y, Xie W, Huang L, Chen W, Yang Y, Zhang W. 2022. Robust Performance-Prescribed Attitude Control of Foldable Wave-Energy Powered AUV Using Optimized Backstepping Technique IEEE Transactions on Intelligent Vehicles, 8 :1230-1240 DOI Publisher Url
Cao G, Yang J, Qiao L, Yang Z, Zhang W. 2022. Adaptive output feedback super twisting algorithm for trajectory tracking control of USVs with saturated constraints Ocean Engineering, 259 DOI Publisher Url
Jia Z, Lu H, Li S, Zhang W. 2022. Distributed dynamic rendezvous control of the AUV-USV joint system with practical disturbance compensations using model predictive control Ocean Engineering, 258 DOI Publisher Url
Zhang G, Liu S, Zhang X, Zhang W. 2022. Event-Triggered Cooperative Formation Control for Autonomous Surface Vehicles under the Maritime Search Operation IEEE Transactions on Intelligent Transportation Systems, 23 :21392-21404 DOI Publisher Url
Zhang G, Liu S, Huang J, Zhang W. 2022. Dynamic Event-Triggered Path-Following Control of Underactuated Surface Vehicle With the Experiment Verification IEEE Transactions on Vehicular Technology, 71 :10415-10425 DOI Publisher Url
Zhou X, Hu Z, Chai Z, Zhang WD, Clima S, Degraeve R, Zhang JF, Fantini A, Garbin D, Delhougne R, Goux L, Kar GS. 2022. Impact of relaxation on the performance of GeSe true random number generator based on Ovonic threshold switching IEEE Electron Device Letters, 43 :1061-1064 DOI Publisher Url Public Url
Tok KH, Mehedi M, Zhang JF, Brown J, Ye Z, Ji Z, Zhang W, Marsland JS, Asenov A, Georgiev V. 2022. An Integral Methodology for Predicting Long Term RTN IEEE Transactions on Electron Devices, DOI Publisher Url Public Url
Zhang JF, Gao R, Duan M, Ji Z, Zhang WD, Marsland J. 2022. Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction Electronics, 11 DOI Publisher Url Public Url
Jiao J, Chen F, Hou Z, Cai J, Zhang W, Li Y. 2022. Fuel cell passenger car temperature tracking control based on cascade internal model control with nonlinear feedforward compensate International Journal of Hydrogen Energy, 47 :13946-13959 DOI Publisher Url
Zhang G, Chu S, Huang J, Zhang W. 2022. Robust adaptive fault-tolerant control for unmanned surface vehicle via the multiplied event-triggered mechanism Ocean Engineering, 249 DOI Publisher Url
Zhang Y, Zhou Y, Chen W, Zhang W, Gao F. 2022. Design, modeling and numerical analysis of a WEC-Glider (WEG) Renewable Energy, 188 :911-921 DOI Publisher Url
Wu Z, Lu Y, Xu Q, Chen W, Zhang W, Gao F. 2022. Load optimization control of SJTU-WEC based on machine learning Ocean Engineering, 249 DOI Publisher Url
Xu X, Lu Y, Liu G, Cai P, Zhang W. 2022. COLREGs-abiding hybrid collision avoidance algorithm based on deep reinforcement learning for USVs Ocean Engineering, 247 DOI Publisher Url
Li X, Zhang W, Lu D. 2022. Robust Asynchronous Output-Feedback Controller Design for Markovian Jump Systems With Output Quantization IEEE Transactions on Systems, Man, and Cybernetics: Systems, 52 :1214-1223 DOI Publisher Url
Pereira M, Deuermeier J, Zhang WD, Freitas P, Barquinha P, Martins R, Fortunato E, Kiazadeh A. 2022. Tailoring the synaptic properties of a-IGZO memristors for artificial deep neural networks APL Materials, 10 DOI Author Url Publisher Url Public Url
Du B, Lin B, Zhang C, Dong B, Zhang W. 2022. Safe deep reinforcement learning-based adaptive control for USV interception mission Ocean Engineering, 246 DOI Publisher Url
Hu Z, Li X, Zhang W, Wu X, Sun H. 2022. Experimental study on the low-speed manoeuvring capability of a twin-lift decommissioning system Ships and Offshore Structures, 17 :51-63 DOI Publisher Url
Yang J, Cao G, Sun Z, Zhang W. 2021. A New Method to Design Distributed Consensus Controller for Linear Multi-Agent Systems with Directed Graphs IEEE Transactions on Circuits and Systems II: Express Briefs, 69 :1492-1496 DOI Publisher Url
Xu X, Cai P, Ahmed Z, Yellapu VS, Zhang W. 2021. Path planning and dynamic collision avoidance algorithm under COLREGs via deep reinforcement learning Neurocomputing, 468 :181-197 DOI Publisher Url
Chai Z, Zhang WD, Clima S, Hatem F, Degraeve R, Diao Q, Zhang JF, Freitas P, Marsland J, Fantini A, Garbin D, Goux L, Kar G. 2021. Cycling induced metastable degradation in GeSe Ovonic threshold switching selector IEEE Electron Device Letters, 42 :1148-1451 DOI Author Url Publisher Url Public Url
Zhang G, Yu W, Li J, Zhang W. 2021. Model-based event-triggered adaptive formation control for underactuated surface vehicles via the minimal learning parameter technique Proceedings of the Institution of Mechanical Engineers. Part I: Journal of Systems and Control Engineering, 236 :592-606 DOI Publisher Url
Lu Y, Xu X, Qiao L, Zhang W. 2021. Robust adaptive formation tracking of autonomous surface vehicles with guaranteed performance and actuator faults Ocean Engineering, 237 DOI Publisher Url
Zhang G, Yao M, Zhang W, Zhang W. 2021. Improved composite adaptive fault-tolerant control for dynamic positioning vehicle subject to the dead-zone nonlinearity IET Control Theory and Applications, 15 :2067-2080 DOI Publisher Url Public Url
Gao R, Ma J, Lin X, Zhang X, En Y, Lu G, Huang Y, Ji Z, Yang H, Zhang WD, Zhang JF. 2021. A Comparative Study of AC Positive Bias Temperature Instability of Germanium nMOSFETs with GeO2/Ge and Si-cap/Ge Gate Stack IEEE Journal of the Electron Devices Society, 9 :539-544 DOI Author Url Publisher Url Public Url
Xue F, He X, Wang Z, Retamal JRD, Chai Z, Lingling J, Chenhui Z, Fang H, Chai Y, Zhang WD, Alshareef H, Ji Z, Li L-J, He J-H, Zhang X. 2021. Giant ferroelectric resistance switching controlled by a modulatory terminal for low-power neuromorphic in-memory computing Advanced Materials, 33 DOI Author Url Publisher Url Public Url
Xiao Z, Du N, Liu J, Zhang W. 2021. SR-Net: A sequence offset fusion net and refine net for undersampled multislice MR image reconstruction Computer Methods and Programs in Biomedicine, 202 DOI Author Url Publisher Url
Yellapu VS, Zhang W, Vajpayee V, Xu X. 2021. A multiscale data reconciliation approach for sensor fault detection Progress in Nuclear Energy, 135 DOI Publisher Url
Mehedi M, Tok KH, Ye Z, Zhang JF, Ji Z, Zhang WD, Marsland J. 2021. On the accuracy in modelling the statistical distribution of Random Telegraph Noise Amplitude IEEE Access, DOI Author Url Publisher Url Public Url
Saeed MA, Ahmed Z, Hussain S, Zhang W. 2021. Wind resource assessment and economic analysis for wind energy development in Pakistan Sustainable Energy Technologies and Assessments, 44 DOI Publisher Url
Yang J, Zhang H, Chu H, Zhang W. 2021. Output event triggered consensus control of nonlinear multi-agent systems with relative state constraints ISA Transactions, 108 :164-177 DOI Author Url Publisher Url
Munje R, Zhang WD. 2021. Observer-based Multirate Feedback Control Design for Two-time-scale System International Journal of Automation and Computing, 18 :1007-1016 DOI Publisher Url
Li X, Zhang W, Lu D. 2021. Zonotopic fault interval estimation for discrete-time Markovin jump systems with generally bounded transition probabilities Journal of the Franklin Institute, 358 :2138-2160 DOI Publisher Url
Saeed MA, Ahmed Z, Zhang W. 2021. Optimal approach for wind resource assessment using Kolmogorov–Smirnov statistic: A case study for large-scale wind farm in Pakistan Renewable Energy, 168 :1229-1248 DOI Publisher Url
Zhang G, Zhang C, Yang T, Zhang W. 2020. Disturbance observer-based composite neural learning path following control of underactuated ships subject to input saturation Ocean Engineering, 216 DOI Publisher Url
Zhang G, Li J, Yu W, Zhang W. 2020. Event-triggered robust neural control for unmanned sail-assisted vehicles subject to actuator failures Ocean Engineering, 216 DOI Publisher Url
Yi B, Ortega R, Zhang W. 2020. Smooth, time-invariant regulation of nonholonomic systems via energy pumping-and-damping International Journal of Robust and Nonlinear Control, 30 :6399-6413 DOI Publisher Url
Huang CF, Zhang XK, Zhang GQ, Zhang WD. 2020. Adaptive disturbance observer based cooperative path-following control for autonomous surface vessels Kongzhi Lilun Yu Yingyong/Control Theory and Applications, 37 :2312-2320 DOI
Zhang GQ, Li JQ, Wang WX, Zhang WD. 2020. Adaptive course-keeping control for unmaned sailboat robot with the speed regulating mechanism Kongzhi Lilun Yu Yingyong/Control Theory and Applications, 37 :2383-2390 DOI
Mehedi M, Tok KH, Zhang JF, Ji Z, Ye Z, Zhang WD, Marsland JS. 2020. An assessment of the statistical distribution of Random Telegraph Noise Time Constants IEEE Access, 8 :182273-182282 DOI Author Url Publisher Url Public Url
Joksas D, Freitas P, Chai Z, Ng WH, Buckwell M, Li C, Zhang WD, Xia QF, Kenyon AJ, Mehonic A. 2020. Committee Machines—A Universal Method to Deal with Non-Idealities in Memristor-Based Neural Networks Nature Communications, 11 DOI Author Url Publisher Url Public Url
Chai Z, Freitas P, Zhang WD, Hatem F, Degraeve R, Clima S, Zhang J, Marsland J, Fantini A, Garbin D, Goux L, Kar G. 2020. Stochastic computing based on volatile GeSe ovonic threshold switching selectors IEEE Electron Device Letters, DOI Author Url Publisher Url Public Url
Gao R, Shi Y, He Z, Chen Y, En Y, Huang Y, Ji Z, Zhang JF, Zhang WD, Zheng X, Zhang J, Liu Y. 2020. A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT IEEE Journal of the Electron Devices Society, 8 :905-910 DOI Author Url Publisher Url Public Url
Zhang H, Liu X, Wang Q, Zhang W, Gao J. 2020. Co-adaptation enhances the resilience of mutualistic networks Journal of the Royal Society Interface, 17 DOI Author Url Publisher Url
Duffy S, Benbakhti B, Zhang WD, Ahmeda K, Kalna K, Boucherta M, Mattalah M, Chahdi HO, Bourzgui N, Soltani A. 2020. A Parametric Technique for Traps Characterization in AlGaN/GaN HEMTs IEEE Transactions on Electron Devices, 67 :1924-1930 DOI Author Url Publisher Url Public Url
Chai Z, Wei S, Zhang WD, Brown J, Degraeve R, Salim F, Clima S, Hatem F, Zhang JF, Freitas P, Marsland J, Fantini A, Garbin D, Goux L, Kar G. 2019. GeSe-based Ovonic Threshold Switching Volatile True Random Number Generator IEEE Electron Device Letters, DOI Author Url Publisher Url Public Url
Guo Y, Li H, Zhang WD, Robertson J. 2019. Structural changes during the switching transition of Chalcogenide Selector devices Applied Physics Letters, 115 DOI Author Url Publisher Url Public Url
Chai Z, Zhang W, Degraeve R, Clima S, Hatem F, Zhang JF, Freitas P, Marsland J, Fantini A, Garbin D, Goux L, Kar GS. 2019. Dependence of switching probability on operation conditions in GexSe1-x ovonic threshold switching selectors IEEE Electron Device Letters, :1-1 DOI Author Url Publisher Url Public Url
Chai Z, Zhang W, Degraeve R, Zhang JF, Marsland J, Fantini A, Garbin D, Clima S, Goux L, Kar GS. 2019. RTN in GexSe1-x OTS Selector Devices Microelectronic Engineering, 215 DOI Author Url Publisher Url Public Url
Manut A, Gao R, Zhang JF, Ji Z, Mehedi M, Vigar D, Asenov A, Kaczer B. 2019. Trigger-When-Charged: A technique for directly measuring RTN and BTI-induced threshold voltage fluctuation under use-Vdd IEEE Transactions on Electron Devices, 66 :1482-1488 DOI Author Url Publisher Url Public Url
Ma J, Chai Z, Zhang WD, Zhang JF, Marsland J, Govoreanu B, Degraeve R, Goux L, Kar G. 2018. TDDB mechanism in a-Si/TiO2 non-filamentary RRAM device IEEE Transactions on Electron Devices, 66 :777-784 DOI Author Url Publisher Url Public Url
Lanza M, Wong HSP, Pop E, Ielmini D, Strukov D, Regan BC, Larcher L, Villena MA, Yang JJ, Goux L, Belmonte A, Yang Y, Puglisi FM, Kang J, Magyari-Köpe B, Yalon E, Kenyon A, Buckwell M, Mehonic A, Shluger A, Li H, Hou TH, Hudec B, Akinwande D, Ge R, Ambrogio S, Roldan JB, Miranda E, Suñe J, Pey KL, Wu X, Raghavan N, Wu E, Lu WD, Navarro G, Zhang WD, Wu H, Li R, Holleitner A, Wurstbauer U, Lemme MC, Liu M, Long S, Liu Q, Lv H, Padovani A, Pavan P, Valov I, Jing X, Han T, Zhu K, Chen S, Hui F, Shi Y. 2018. Recommended Methods to Study Resistive Switching Devices Advanced Electronic Materials, DOI Author Url Publisher Url Public Url
Chai Z, Freitas P, Zhang WD, Hatem F, Zhang JF, Marsland J, Govoreanu B, Goux L, Kar GS. 2018. Impact of RTN on Pattern Recognition Accuracy of RRAM-based Synaptic Neural Network IEEE Electron Device Letters, DOI Author Url Publisher Url Public Url
Ji Z, Gao R, Zhang JF, Marsland J, Zhang WD. 2018. As-grown-Generation (A-G) Model for Positive Bias Temperature Instability (PBTI) IEEE Transactions on Electron Devices, 65 :3662-3668 DOI Author Url Publisher Url Public Url
Duffy SJ, Benbakhti B, Kalna K, Boucherta M, Zhang WD, Bourzgui N, Soltani A. 2018. Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs IEEE Access, DOI Author Url Publisher Url Public Url
Chai Z, Zhang W, Freitas P, Hatem F, Zhang JF, Marsland J, Govoreanu B, Goux L, Kar GS, Hall S, Chalker P, Robertson J. 2018. The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique IEEE Electron Device Letters, 39 :955-958 DOI Author Url Publisher Url Public Url
Ma J, Chai Z, Zhang WD, Zhang JF, Ji Z, Benbakhti B, Govoreanu B, Simoen E, Goux L, Belmonte A, Degraeve R, Kar G, Jurczak M. 2018. Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution IEEE Transactions on Electron Devices, 65 :970-977 DOI Author Url Publisher Url Public Url
Zhang JF, Ji Z, Zhang WEI. 2017. As-grown-Generation (AG) Model of NBTI: a shift from fitting test data to prediction Microelectronics Reliability, DOI Author Url Publisher Url Public Url
Ahmeda K, Ubochi B, Benbakhti B, Duffy SJ, Soltani A, Zhang WD, Kalna K. 2017. Role of Self-Heating and Polarization in AlGaN/GaN Based Heterostructures IEEE Access, 5 :20946-20952 DOI Author Url Publisher Url Public Url
Ji Z, Gao R, Manut AB, Zhang JF, Franco J, Hatta SWM, Zhang W, Kaczer B, Linten D, Groeseneken G. 2017. NBTI-Generated Defects in Nanoscaled Devices: Fast Characterization Methodology and Modeling IEEE Transactions on Electron Devices, 64 :4011-4017 DOI Author Url Publisher Url Public Url
Benbakhti B, Duffy SJ, Mattalah M, Zhang WD, Bouchilaoun M, Boucherta M, Kalna K, Bourzgui N, Maher H, Soltani A. 2017. Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate ECS Journal of Solid State Science and Technology, 6 DOI Author Url Publisher Url Public Url
Sedghi N, Li H, Brunell IF, Dawson K, Guo Y, Potter RJ, Gibbon JT, Dhanak VR, Zhang WD, Zhang JF, Hall S, Robertson J, Chalker PR. 2017. Enhanced switching stability in Ta 2 O 5 resistive RAM by fluorine doping Applied Physics Letters, 111 DOI Author Url Publisher Url Public Url
Chai Z, Ma J, Zhang WD, Govoreanu B, Zhang JF, Ji Z, Jurczak M. 2017. Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals IEEE Transactions on Electron Devices, 64 :4099-4105 DOI Author Url Publisher Url Public Url
Duan M, Zhang JF, Ji Z, Zhang WD, Kaczer B, Asenov A. 2017. Key issues and solutions for characterizing hot carrier aging of nano-meter scale nMOSFETs IEEE Transactions on Electron Devices, 64 :2478-2484 DOI Author Url Publisher Url Public Url
Sedghi N, Li H, Brunell IF, Dawson K, Potter RJ, Guo Y, Gibbon JT, Dhanak VR, Zhang W, Zhang JF, Robertson J, Hall S, Chalker PR. 2017. The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM Applied Physics Letters, 110 DOI Author Url Publisher Url Public Url
Gao R, Manut AB, Ji Z, Ma J, Duan M, Zhang JF, Franco J, Hatta SFWM, Zhang WD, Kaczer B, Vigar D, Linten D, Groeseneken G. 2017. Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation IEEE Transactions on Industrial Electronics, 64 :1467-1473 DOI Author Url Publisher Url Public Url
Ma J, Zhang WD, Zhang JF, Benbakhti B, Ji Z, Mitard J, Arimura H. 2016. A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 :3830-3836 DOI Author Url Publisher Url Public Url
Duan M, Zhang JF, Ji Z, Zhang WD, Vigar D, Asenov A, Gerrer L, Chandra V, Aitken R, Kaczer B. 2016. Insight into Electron Traps and Their Energy Distribution under Positive Bias Temperature Stress and Hot Carrier Aging IEEE Transactions on Electron Devices, 63 :3642-3648 DOI Author Url Publisher Url Public Url
Manut AB, Zhang JF, Duan M, Ji Z, Zhang WD, kaczer B, Schram T, Horiguchi, N, Groeseneken G. 2015. Impact of Hot Carrier Aging on Random Telegraph Noise and Within a Device Fluctuation IEEE Journal of the Electron Devices Society, DOI Author Url Publisher Url Public Url
Ji Z, Zhang JF, Zhang WD, Gao R, Zhang X. 2015. An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel IEEE Transactions on Electron Devices, 62 :3633-3639 DOI Author Url Publisher Url Public Url
Gao R, Ji Z, Zhang JF, Zhang WD, Hatta SFWM, Niblock J, Bachmayr P, Stauffer L, Wright K, Greer S. 2015. A Discharge-Based Pulse Technique for Probing the Energy Distribution of Positive Charges in Gate Dielectric IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 28 :221-226 DOI Author Url Publisher Url Public Url
Tang BJ, Zhang WD, Breuil L, Robinson C, Wang YQ, Toledano-Luque M, Van den Bosch G, Zhang JF, Van Houdt J. 2014. Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations MICROELECTRONICS RELIABILITY, 54 :2258-2261 DOI Author Url Publisher Url
Hatta SWM, Ji Z, Zhang JF, Zhang WD, Soin N, Kaczer B, Gendt SD, Groeseneken G. 2014. Energy distribution of positive charges in high-k dielectric MICROELECTRONICS RELIABILITY, 54 :2329-2333 DOI Author Url Publisher Url
Duan M, Zhang JF, Ji Z, Zhang WD, Kaczer B, Schram T, Ritzenthaler R, Groeseneken G, Asenov A. 2014. Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 :3081-3089 DOI Author Url Publisher Url Public Url
Tang B, Zhang W, Toledano-Luque M, Zhang JF, Degraeve R, Ji Z, Arreghini A, Van den Bosch G, Van Houdt J. 2014. Experimental Evidence Toward Understanding Charge Pumping Signals in 3-D Devices With Poly-Si Channel IEEE Transactions on Electron Devices, 61 :1501-1507 DOI Author Url Publisher Url
Tang B, Zhang WD, Degraeve R, Breuil L, Blomme P, Zhang JF, Ji Z, Zahid M, Toledano-Luque M, Van den Bosch G, Van Houdt J. 2014. Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High-kappa Intergate Dielectrics of Flash Memory Cells IEEE Transactions on Electron Devices, 61 :1299-1306 DOI Author Url Publisher Url
Ma J, Zhang JF, Ji Z, Benbakhti B, Zhang WD, Zheng XF, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker PR. 2014. Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With GeO2/Al2O3 Stack IEEE Transactions on Electron Devices, 61 :1307-1315 DOI Author Url Publisher Url Public Url
Ma J, Zhang JF, Ji Z, Benbakhti B, Zhang WD, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2014. Energy Distribution of Positive Charges in Al2O3/GeO2/Ge pMOSFETs IEEE ELECTRON DEVICE LETTERS, 35 :160-162 DOI Author Url Publisher Url Public Url
Ji Z, Hatta SWM, Zhang JF, Zhang W, Niblock J, Bachmayr P, Stauffer L, Wright K, Greer S. 2014. A new technique for probing the energy distribution of positive charges in gate dielectric 2014 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), :73-78 DOI Author Url Publisher Url
Robinson C, Zhang WD, Tang B, Zheng XF, Zhang JF. 2014. Instabilities induced by electron trapping/detrapping in high-k gate dielectrics of Flash memories: Evaluation and Suppression Tang TA, Zhou J. 2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), DOI Author Url Publisher Url
Zhang JF, Duani M, Ji Z, Zhang W. 2014. TIME-DEPENDENT DEVICE-TO-DEVICE VARIATION ACCOUNTING FOR WITHIN-DEVICE FLUCTUATION (TVF): A NEW CHARACTERIZATION TECHNIQUE Tang TA, Zhou J. 2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), DOI Author Url Publisher Url
Ji Z, Gillbert J, Zhang JF, Zhang W. 2013. A new Ultra-Fast Single Pulse technique (UFSP) for channel effective mobility evaluation in MOSFETs IEEE International Conference on Microelectronic Test Structures, :64-69 DOI Author Url Publisher Url
Duan M, Zhang JF, Ji Z, Zhang WD, Kaczer B, Schram T, Ritzenthaler R, Groeseneken G, Asenov A. 2013. New analysis method for time-dependent device-to-device variation accounting for within-device fluctuation IEEE Transactions on Electron Devices, 60 :2505-2511 DOI Author Url Publisher Url
Tang B, Robinson C, Zhang WD, Zhang JF, Degraeve R, Blomme P, Toledano-Luque M, Van Den Bosch G, Govoreanu B, Van Houdt J. 2013. Read and pass disturbance in the programmed states of floating gate flash memory cells with high-κ interpoly gate dielectric stacks IEEE Transactions on Electron Devices, 60 :2261-2267 DOI Author Url Publisher Url
Tang B, Toledano-Luque M, Zhang WD, Van Den Bosch G, Degraeve R, Zhang JF, Van Houdt J. 2013. Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization Microelectronic Engineering, 109 :39-42 DOI Author Url Publisher Url
Ma J, Zhang JF, Ji Z, Benbakhti B, Duan M, Zhang W, Zheng XF, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2013. Towards understanding hole traps and NBTI of Ge/GeO
Duan M, Zhang JF, Ji Z, Zhang WD, Kaczer B, De Gendt S, Groeseneken G. 2013. New insights into defect loss, slowdown, and device lifetime enhancement IEEE Transactions on Electron Devices, 60 :413-419 DOI Author Url Publisher Url
Duan M, Zhang JF, Ji Z, Zhang W. 2013. Defect losses under different processes, stress, recovery, and anneal conditions Lin Q, Claeys C, Huang D, Wu H, Kuo Y, Huang R, Lai K, Zhang Y, Guo Z, Wang S, Liu R, Jiang T, Song P, Lam C, Xiong J, Chen K. CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2013 (CSTIC 2013), 52 :929-934 DOI Author Url Publisher Url
Hatta SWM, Ji Z, Zhang JF, Duan M, Zhang WD, Soin N, Kaczer B, De Gendt S, Groeseneken G. 2013. Energy Distribution of Positive Charges in Gate Dielectric: Probing Technique and Impacts of Different Defects IEEE TRANSACTIONS ON ELECTRON DEVICES, 60 :1745-1753 DOI Author Url Publisher Url
Ji Z, Hatta SFWM, Zhang JF, Ma JG, Zhang W, Soin N, Kaczer B, De Gendt S, Groeseneken G. 2013. Negative Bias Temperature Instability Lifetime Prediction: Problems and Solutions 2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), DOI Author Url Publisher Url
Duan M, Zhang JF, Ji Z, Ma JG, Zhang W, Kaczer B, Schram T, Ritzenthaler R, Groeseneken G, Asenov A. 2013. Key issues and techniques for characterizing Time-dependent Device-to-Device Variation of SRAM 2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), DOI Author Url Publisher Url
Zhang JF, Ji Z, Duan M, Zhang W. 2012. Development of new characterisation technique for interface states beyond bandgap ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, DOI Author Url Publisher Url
Zhang WD, Robinson C, Zheng XF, Zhang JF. 2012. Characterisation of electron traps in high-k dielectric stacks for Flash memory applications using fast pulse techniques ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, DOI Author Url Publisher Url
Ji Z, Zhang JF, Zhang WD, Kaczer B, De Gendt S, Groeseneken G. 2012. Interface States Beyond Band Gap and Their Impact on Charge Carrier Mobility in MOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES, 59 :783-790 DOI Author Url Publisher Url
Duan M, Zhang JF, Ji Z, Zhang W, Kaczer B, De Gendt S, Groeseneken G. 2012. Defect Loss: A New Concept for Reliability of MOSFETs IEEE ELECTRON DEVICE LETTERS, 33 :480-482 DOI Author Url Publisher Url
Ji Z, Zhang JF, Zhang W. 2012. A New Mobility Extraction Technique Based on Simultaneous Ultrafast Id-Vg and Ccg-Vg Measurements in MOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES, 59 :1906-1914 DOI Author Url Publisher Url
Tang B, Zhang WD, Zhang JF, Van den Bosch G, Toledano-Luque M, Govoreanu B, Van Houdt J. 2012. Investigation of Abnormal VTH/VFB Shifts Under Operating Conditions in Flash Memory Cells With Al2O3 High-κ Gate Stacks IEEE TRANSACTIONS ON ELECTRON DEVICES, 59 :1870-1877 DOI Author Url Publisher Url
Benbakhti B, Zhang JF, Ji Z, Zhang W, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2012. Characterization of electron traps in Si-capped Ge MOSFETs with HfO
Zheng XF, Robinson C, Zhang WD, Zhang JF, Govoreanu B, Van Houdt J. 2011. Electron Trapping in HfAlO High-kappa Stack for Flash Memory Applications: An Origin of V-th Window Closure During Cycling Operations IEEE TRANSACTIONS ON ELECTRON DEVICES, 58 :1344-1351 DOI Author Url Publisher Url
Lin L, Ji Z, Zhang JF, Zhang WD, Kaczer B, De Gendt S, Groeseneken G. 2011. A Single Pulse Charge Pumping Technique for Fast Measurements of Interface States IEEE TRANSACTIONS ON ELECTRON DEVICES, 58 :1490-1498 DOI Author Url Publisher Url
Wang Y, Li H, Zhang W. 2011. Performance analysis of cooperative relay topology Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University, 38 :80-84 DOI
Zhang JF, Ji Z, Lin L, Zhang W. 2010. Effective threshold voltage shift: A measure for NBTI removing uncertainty in mobility degradation ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, :1600-1603 DOI Publisher Url
Zheng XF, Zhang WD, Govoreanu B, Zhang JF, van Houdt J. 2010. A New Multipulse Technique for Probing Electron Trap Energy Distribution in High-kappa Materials for Flash Memory Application IEEE TRANSACTIONS ON ELECTRON DEVICES, 57 :2484-2492 DOI Author Url Publisher Url
Aguado DR, Govoreanu B, Zhang WD, Jurczak M, De Meyer K, Van Houdt J. 2010. A Novel Trapping/Detrapping Model for Defect Profiling in High-k Materials Using the Two-Pulse Capacitance-Voltage Technique IEEE TRANSACTIONS ON ELECTRON DEVICES, 57 :2726-2735 DOI Author Url Publisher Url
Zheng XF, Zhang WD, Govoreanu B, Aguado DR, Zhang JF, Van Houdt J. 2010. Energy and Spatial Distributions of Electron Traps Throughout SiO2/Al2O3 Stacks as the IPD in Flash Memory Application IEEE TRANSACTIONS ON ELECTRON DEVICES, 57 :288-296 DOI Author Url Publisher Url
Ji Z, Zhang JF, Zhang W, Groeseneken G, Pantisano L, De Gendt S, Heyns MM. 2009. An assessment of the mobility degradation induced by remote charge scattering APPLIED PHYSICS LETTERS, 95 DOI Author Url Publisher Url
Zhang WD, Govoreanu B, Zheng XF, Aguado DR, Rosmeulen M, Blomme P, Zhang JF, Van Houdt J. 2008. Two-pulse C-V: A new method for characterizing electron traps in the bulk of SiO2/high-k dielectric stacks IEEE ELECTRON DEVICE LETTERS, 29 :1043-1046 DOI Author Url Publisher Url
Zhang JF, Zhao C, Chang M, Zhang W, Groeseneken G, Pantisano L, De Gendt S, Heyns M. 2007. Instability and Defects in Gate Dielectric: Similarity and Differences Between Hf-Stacks and SiO2 ECS Meeting Abstracts, MA2007-02 :1133-1133 DOI Publisher Url
Zheng X, Zhang W, Zhang J, Hao Y. 2007. Non-Uniform Distribution of Electron Traps Generated by FN Stress in Silicon Dioxides ECS Meeting Abstracts, MA2007-01 :670-670 DOI Publisher Url
Chang MH, Zhang JF, Zhang WD. 2006. Assessment of capture cross sections and effective density of electron traps generated in silicon dioxides IEEE TRANSACTIONS ON ELECTRON DEVICES, 53 :1347-1354 DOI Author Url Publisher Url
Zhang WD, Zhang JF, Zhao CZ, Chang MH, Groeseneken G, Degraeve R. 2006. Electrical signature of the defect associated with gate oxide breakdown IEEE ELECTRON DEVICE LETTERS, 27 :393-395 DOI Author Url Publisher Url
Ma XH, Hao Y, Sun BG, Gao HX, Ren HX, Zhang JC, Zhang JF, Zhang XJ, Zhang WD. 2006. Fabrication and characterization of groove-gate MOSFETs based on a self-aligned CMOS process CHINESE PHYSICS, 15 :195-198 DOI Author Url Publisher Url
Zhang WD, Zhang JF, Lalor MJ, Burton DR, Groeseneken G, Degraeve R. 2003. Effects of detrapping on electron traps generated in gate oxides SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 18 :174-182 DOI Author Url Publisher Url
Zhang WD, Zhang JF, Lalor M, Burton D, Groeseneken GV, Degraeve R. 2002. Two types of neutral electron traps generated in the gate silicon dioxide IEEE TRANSACTIONS ON ELECTRON DEVICES, 49 :1868-1875 DOI Author Url Publisher Url
Zhang WD, Zhang JF, Uren MJ, Groeseneken G, Degraeve R, Lalor M, Burton D. 2001. On the interface states generated under different stress conditions APPLIED PHYSICS LETTERS, 79 :3092-3094 DOI Author Url Publisher Url
Zhang WD, Zhang JF, Lalor M, Burton D, Groeseneken G, Degraeve R. 2001. On the mechanism of electron trap generation in gate oxides MICROELECTRONIC ENGINEERING, 59 :89-94 DOI Author Url Publisher Url
Zhang WD, Zhang JF, Uren MJ, Groeseneken G, Degraeve R, Lalor M, Burton D. 2001. Dependence of energy distributions of interface states on stress conditions MICROELECTRONIC ENGINEERING, 59 :95-99 DOI Author Url Publisher Url
Hao Y, Zhu JG, Ren HX, Zhang WD. 2001. The gate-oxide breakdown effect coupled by channel hot-carrier-effect in SOI MOSFET's CHINESE JOURNAL OF ELECTRONICS, 10 :204-209 Author Url
Zhang JF, Duan M, Ji Z, Zhang WD, Kaczer B, Schram T, Ritzenthaler R, Thean G, Groseneken G, Asenov A. Time-dependent variation: A new defect-based prediction methodology 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, DOI Author Url Publisher Url Public Url
Conference publication
Hu Z, Wang G, Chai Z, Zhang W, Garbin D, Degraeve R, Clima S, Ravsher T, Fantini A, Zhang J, Belmonte A, Kar G. 2024. Understanding the Variability in GeAsTe Ovonic Threshold Switching Devices 2024 IEEE International Electron Devices Meeting (IEDM), International Electron Device Meeting 2024 DOI Publisher Url Public Url
Chai Z, Zhang W, Zhang JF. 2024. Stochastic Computing Based on Volatile Ovonic Threshold Switching Devices Proceedings of IEEE 15th International Conference on ASIC (ASICON), IEEE 15th International Conference on ASIC 15 :1-4 DOI Publisher Url Public Url
Brown J, Tok KH, Gao R, Ji Z, Zhang W, Zhang JF. 2024. Predictive Modelling of Hot Carrier Degradation 2024 IEEE 17th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024, DOI Publisher Url
He Y, An S, Chen Y, Zhou X, Yuan X, Zhang W, Chai Z, Min T. 2024. Impact of External Magnetic Interference on the Performance of MRAM-Based Neuromorphic Computing 2024 IEEE 17th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024, DOI Publisher Url
Tok KH, Zhang JF, Brown J, Zhigang J, Zhang WD. 2023. Extracting statistical distributions of RTN originating from both acceptor-like and donor-like traps Proceedings of IEEE 15th International Conference on ASIC (ASICON), 2023 IEEE 15th International Conference on ASIC (ASICON 2023) :1-4 DOI Publisher Url Public Url
Zhang W, Chai Z, Freitas P, Zhang JF, Marsland J. 2022. Relaxation in GeSe Ovonic Threshold Switching Device Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022, DOI Publisher Url
Tok KH, Mehedi M, Zhang JF, Ye Z, Ji Z, Zhang W, Marsland J. 2022. Criteria for selecting statistical distribution for the Amplitude of Random Telegraph Noise Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022, DOI Publisher Url
Chai Z, Freitas P, Zhang WD, Zhang JF, Marsland J. 2021. True Random Number Generator Based on Switching Probability of Volatile Gexse1-X Ovonic Threshold Switching Selectors IEEE Explore, 2021 IEEE 14th International Conference on ASIC DOI Publisher Url Public Url
Mehedi M, Tok KH, Zhang JF, Ji Z, Ye Z, Zhang WD, Marsland J. 2021. An integrated method for extracting the statistical distribution of RTN time constants 2021 IEEE 14th International Conference on ASIC (ASICON), IEEE 14th International Conference on ASIC (ASICON) DOI Publisher Url Public Url
Duan M, Zhang JF, Ji Z, Zhang WD. 2020. TOWARDS UNDERSTANDING INTERACTION BETWEEN HOT CARRIER AGEING AND PBTI 2020 China Semiconductor Technology International Conference (CSTIC), China Semiconductor Technology International Conference (CSTIC). DOI Author Url Publisher Url Public Url
Zhang JF, Duan M, Mehedi M, Tok D, Ye Z, Ji Z, Zhang WD. 2020. Defect loss and its physical processes 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), IEEE 15th International Conference on Solid-State and Integrated-Circuit Technology DOI Publisher Url Public Url
Freitas P, Zhang WD, Chai Z, Zhang JF, Marsland J. 2020. Impact of RTN and Variability on RRAM-Based Neural Network 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), IEEE 15th International Conference on Solid-State and Integrated-Circuit Technology DOI Publisher Url Public Url
Yang J, Cao G, Zhang W. 2020. Robust Rendezvous Control of Relative Constrained Linear Multi-Agent Systems: An Edge-based Event-Triggered Control Approach Proceedings - 2020 Chinese Automation Congress, CAC 2020, :7158-7162 DOI Publisher Url
Huang Y, Wang X, Zou L, Zhuang Z, Zhang W. 2020. Soft policy optimization using dual-track advantage estimator Proceedings - IEEE International Conference on Data Mining, ICDM, 2020-November :1064-1069 DOI Publisher Url
Zhang JF, Gao R, Ji Z, Zhang WD. 2020. Challenge and solution for characterizing NBTI-generated defects in nanoscale devices 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA), International Symposium on the Physical and Failure Analysis of Integrated Circuits DOI Author Url Publisher Url Public Url
Hatem F, Chai Z, Zhang WD, Fantini A, Degraeve R, Clima S, Garbin D, Robertson J, Guo Y, Zhang JF, Marsland J, Freitas P, Goux L, Kar G. 2019. Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme 2019 IEEE International Electron Devices Meeting (IEDM), IEEE International Electron Device Meeting (IEDM) DOI Author Url Publisher Url Public Url
Zhang JF, Manut AB, Gao R, Mehedi M, Ji Z, Zhang WD, Marsland J. 2019. An assessment of RTN-induced threshold voltage jitter 2019 IEEE 13th International Conference on ASIC (ASICON), 2019 13th IEEE International Conference on ASIC DOI Author Url Publisher Url Public Url
Zhang JF, Ji Z, Duan M, Zhang WD, Zhao C. 2019. Voltage step stress: a technique for reducing test time of device ageing 2019 International Conference on IC Design and Technology (ICICDT), THE 17th INTERNATIONAL CONFERENCE ON IC DESIGN & TECHNOLOGY DOI Author Url Publisher Url Public Url
Chai Z, Zhang W, Degraeve R, Clima S, Hatem F, Zhang JF, Freitas P, Marsland J, Fantini A, Garbin D, Goux L, Kar G. 2019. Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors 2019 Symposium on VLSI Technology, 2019 Symposia on VLSI Technology and Circuits DOI Author Url Publisher Url Public Url
Manut AB, Zhang JF, Ji Z, Zhang WD. 2019. Interaction between random telegraph noise and hot carrier ageing 2019 China Semiconductor Technology International Conference (CSTIC), IEEE China Semiconductor Technology International Conference (CSTIC) DOI Author Url Publisher Url Public Url
Zhang JF, Duan M, Ji Z, Zhang WD. 2018. A framework for defects in PBTI and hot carrier ageing 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 14th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) DOI Author Url Publisher Url Public Url
Zhang WD, Chai Z, Ma J, Zhang JF. 2018. Analysis of switching, degradation and failure mechanisms by RTN signals in non-filamentary (a-VMCO) RRAM devices 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), ICSICT 2018 DOI Author Url Publisher Url Public Url
Duffy SJ, Benbakhti B, Zhang WD, Kalna K, Ahmeda K, Boucherta M, Bourzgui N, Maher H, Soltani A. 2018. A Source and Drain Transient Currents Technique for Trap Characterisation in AlGaN/GaN HEMTs 2018 13th European Microwave Integrated Circuits Conference (EuMIC), European Microwave Week 2018 DOI Author Url Publisher Url Public Url
Brown J, Gao R, Ji Z, Chen J, Wu J, Zhang JF, Zhou B, Shi Q, Crawford J, Zhang WD. 2018. A low-power and high-speed True Random Number Generator using generated RTN 2018 IEEE Symposium on VLSI Technology, 2018 Symposia on VLSI Technology and Circuits DOI Author Url Publisher Url Public Url
Zhang JF, Duan M, Ji Z, Zhang WD. 2018. Assessing the Accuracy of Statistical Properties Extracted from a Limited Number of Device Under Test for Time Dependent Variations Proceeding of IEEE China Semiconductor Technology International Conference 2018 (CSTIC 2018), 2018 China Semiconductor Technology International Conference (CSTIC) DOI Author Url Publisher Url Public Url
Zhang JF, Duan M, Ji Z, Zhang WD. 2017. Hot carrier aging of nano-scale devices: characterization method, statistical variation, and their impact on use voltage 2017 IEEE 12th International Conference on ASIC (ASICON), IEEE 12th International Conference on ASIC DOI Publisher Url Public Url
Zhang JF, Ji Z, Zhang WD. 2017. The As-grown-Generation (AG) model: A reliable model for reliability prediction under real use conditions 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), IEEE 24th International Symposium on The Physical and Failure Analysis of Integrated Circuits DOI Author Url Publisher Url Public Url
Ahmeda K, Ubochi B, Kalna K, Benbakhti B, Duffy SJ, Zhang WD, Soltani A. 2017. Self-Heating and Polarization Effects in AlGaN/AlN/GaN/AlGaN Based Devices Proceedings of the European Microwave Integrated Circuits COnference, European Microwave Week 2017 :37-40 DOI Author Url Publisher Url Public Url
Duffy SJ, Gerbedoen JC, Mattalah M, Benbakhti B, Zhang W, Boucherta M, Kalna K, Maher H, Soltani A. 2017. Low Ohmic Contact Resistance for AlGaN/GaN HEMTs with high Al Concentration & Si-HP [111] Substrate UK Semiconductors :149-149
Duan M, Zhang JF, Zhang JC, Zhang WD, Ji Z, Benbakhti B, Zhang XF, Hao Y, Vigar D, Chandra V, Aitken R, Kaczer B, Groeseneken G, Asenov A. 2017. Interaction between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction IEEE International Reliability Physics Symposium Proceedings, 2017 IEEE International Reliability Physics Symposium DOI Author Url Publisher Url Public Url
Zhang JF, Ma J, Zhang WD, Ji Z. 2017. DEFECTS AND LIFETIME PREDICTION FOR GE PMOSFETS UNDER AC NBTI STRESSES 2017 China Semiconductor Technology International Conference (CSTIC), China Semiconductor Technology International Conference (CSTIC) DOI Author Url Publisher Url Public Url
Ma J, Chai Z, Zhang WD, Govoneanu B, Zhang JF, Ji Z, Benbakhti B, Groeseneken G, Jurczak M. 2017. Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement Technical Digest - International Electron Devices Meeting, IEEE International Electron Devices Meeting DOI Author Url Publisher Url Public Url
Zhang JF, Duan M, Ji Z, Zhang W. 2017. Hot carrier aging of nano-scale devices: characterization method, statistical variation, and their impact on use voltage Qin YJ, Hong ZL, Tang TA. 2017 IEEE 12TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 12th IEEE International Conference on ASIC (ASICON) :670-673 DOI Author Url Publisher Url
Gao R, ji Z, Hatta SM, Zhang JF, Franco J, Kaczer B, Zhang W, Duan M, De Gendt S, Linten D, Groeseneken G, Bi J, Liu M. 2016. Predictive As-grown-Generation (A-G) model for BTI-induced device/circuit level variations in nanoscale technology nodes Technical Digest - International Electron Devices Meeting, 2016 IEEE International Electron Device Meeting (IEDM) DOI Author Url Publisher Url
Zhang JF, Duan M, Ji Z, Zhang W. 2016. Hot carrier aging of nano-meter devices 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) DOI Author Url Publisher Url Public Url
Zhang W, Chai Z, Ma J, Zhang J, Ji Z. 2016. Analysis of RTN signals in Resistive-Switching RAM device and its correlation with device operations 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) DOI Author Url Publisher Url Public Url
Chai Z, Ma J, Zhang WD, Govoreanu B, Simoen E, Zhang JF, Ji Z, Gao R, Groeseneken G, Jurczak M. 2016. RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism Digest of Technical Papers - Symposium on VLSI Technology, IEEE 2016 Symposia on VLSI Technology and Circuits DOI Author Url Publisher Url Public Url
Ji Z, Gao R, Zhang JF, Zhang WD, Duan M, Ren P, Arimura H, Wang R, Franco R. 2016. Understanding charge traps for optimizing Si-passivated Ge nMOSFETs 2016 IEEE Symposium on VLSI Technology, Symposia on VLSI Technology and Circuits DOI Author Url Publisher Url Public Url
Zhang JF, Duan M, Ji Z, Zhang WD. 2016. DEFECTS FOR RANDOM TELEGRAPH NOISE AND NEGATIVE BIAS TEMPERATURE INSTABILITY IEEE Explore, 2016 IEEE China Semiconductor Technology International Conference DOI Author Url Publisher Url Public Url
Claeys C, de Andrade MGC, Chai Z, Fang W, Govoreanu B, Kaczer B, Zhang W, Simoen E. 2016. Random Telegraph Signal Noise in Advanced High Performance and Memory Devices 2016 31ST SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO), 31st Symposium on Microelectronics Technology and Devices (SBMicro) DOI Author Url Publisher Url
Zhang JF, Duan M, Manut A, Ji Z, Zhang W, Asenov A, Gerrer L, Reid D, Razaidi H, Vigar D, Chandra V, Aitken R, Kaczer B, Groeseneken G. 2015. Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM 2015 IEEE International Electron Devices Meeting (IEDM), IEEE International Electron Devices Meeting (IEDM) :20.4.1-20.4.4 DOI Author Url Publisher Url Public Url
Zhang JF, Duan M, Ji Z, Zhang WD. 2015. NBTI prediction and its induced time dependent variation Proceedings of 2015 11th IEEE International Conference on ASIC (ASICON), 2015 11th IEEE International Conference on ASIC (ASICON) :1-4 DOI Author Url Publisher Url Public Url
Ji Z, Linten D, Boschke R, Hellings G, Chen SH, Alian A, Zhou D, Mols Y, Ivanov T, Franco J, Kaczer B, Zhang X, Gao R, Zhang JF, Zhang WD, Collaert N. 2015. ESD characterization of planar InGaAs devices Reliability Physics Symposium (IRPS), 2015 IEEE International, IEEE International Reliability Physics Symposium (IRPS) :3F.1.1-3F.1.7 DOI Author Url Publisher Url Public Url
Ji Z, Zhang JF, Lin L, Duan M, Zhang WD, Zhang X, Gao R, Kaczer B, Franco J, Schram T, Horiguchi N, De Gendt S, Groeseneken G. 2015. A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias 2015 Symposium on VLSI Technology Digest of Technical Papers, 2015 Symposia on VLSI Technology and Circuits :T36-T37 DOI Author Url Publisher Url Public Url
Ji Z, Ren P, Duan M, Zhang JF. 2015. New Insights into the Design for End-of-life Variability of NBTI in Scaled High-κ/Metal-gate Technology for the nano-Reliability Era Electron Devices Meeting (IEDM), 2014 IEEE International, Electron Devices Meeting :34.1.1-34.1.4 DOI Author Url Publisher Url Public Url
Ma J, Zhang WD, Zhang JF, Benbakhti B, Ji Z, Mitard J, Franco J, Kaczer B, Groeseneken G. 2014. NBTI of Ge pMOSFETs: understanding defects and enabling lifetime prediction Electron Devices Meeting (IEDM), 2014 IEEE International, 2014 IEEE International Electron Devices Meeting (IEDM) :34.2.1-34.2.4 DOI Author Url Publisher Url Public Url
Ji Z, Zhang JF, Zhang WEI, Zhang X. 2014. A single device based Voltage Step Stress (VSS) Technique for fast reliability screening Reliability Physics Symposium, 2014 IEEE International, Reliability Physics Symposium, 2014 :GD.2.1-GD.2.4 DOI Author Url Publisher Url Public Url
Hatta SWM, Ji Z, Zhang JF, Zhang WD, Soin N, Kaczer B, Gendt SD, Groeseneken G. 2014. Energy distribution of positive charges in high-k dielectric Microelectronics Reliability, 54 :2329-2333 DOI
Tang BJ, Zhang WD, Breuil L, Robinson C, Wang YQ, Toledano-Luque M, Van Den Bosch G, Zhang JF, Van Houdt J. 2014. Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations Microelectronics Reliability, 54 :2258-2261 DOI
Wang Y, Yang L, Ai Y, Li H, Zhang W. 2012. Joint signal space alignment and precoding in two-way relay multi-user networks Proceedings of the 2012 4th International Conference on Intelligent Networking and Collaborative Systems, INCoS 2012, :385-389 DOI Publisher Url
Tang BJ, Zhang WD, Zhang JF, Van den Bosch G, Govoreanu B, Van Houdt J. 2011. Abnormal VTH/VFB shift caused by as-grown mobile charges in Al2O3 and its impacts on Flash memory cell operations 2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), DOI Author Url Publisher Url
Lin L, Ji Z, Zhang JF, Zhang WD. 2011. Development of a Fast Technique for Characterizing Interface States SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 11, 35 :81-93 DOI Author Url Publisher Url
Zheng XF, Zhang WD, Govoreanu B, Zhang JF, Van Houdt J. 2009. A discharge-based multi-pulse technique (DMP) for probing electron trap energy distribution in high-k materials for flash memory application Technical Digest - International Electron Devices Meeting, IEDM, DOI Publisher Url
Zheng XF, Zhang WD, Govoreanu B, Zhang JF, Van Houdt J. 2009. Impact of PDA temperature on electron trap energy and spatial distributions in SiO2/Al2O3 stack as the IPD in Flash memory cells MICROELECTRONIC ENGINEERING, 16th Biennial Conference on Insulating Films on Semiconductors 86 :1834-1837 DOI Author Url Publisher Url
Zheng XFN, Zhang WD, Govoreanu B, Zhang JF, van Houdt J. 2009. A discharge-based multi-pulse technique (DMP) for probing electron trap energy distribution in high-k materials for Flash memory application 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, IEEE International Electron Devices Meeting (IEDM 2009) :127-+ Author Url
Zhang JF, Chang MH, Ji Z, Zhang WD. 2008. Recent progress in understanding the instability and defects in gate dielectrics Yu M, An X. 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 9th International Conference on Solid-State and Integrated-Circuit Technology :608-611 DOI Author Url Publisher Url
Chang MH, Wang Y, Zhang JF, Zhao CZ, Zhang WD, Xu M. 2007. Contribution of as-grown hole traps to NBTI ECS Transactions, 6 :245-262 DOI Publisher Url
Zhang JF, Zhao CZ, Chang MH, Zhang W, Groeseneken G, Pantisano L, De Gendt S, Heyns M. 2007. Instability and defects in gate dielectric: Similarity and differences between Hf-stacks and SiO
Zheng XF, Zhang WD, Zhang JF, Chang MH, Hao Y. 2007. Non-uniform distribution of electron traps generated by fowler-nordheim stress in silicon dioxides ECS Transactions, 6 :329-341 DOI Publisher Url
Zhang WD, Hao Y. 1996. Research of a Chinese terminal I/O port ASIC Zhang QL, Tang TA, Yu HH. 1996 2ND INTERNATIONAL CONFERENCE ON ASIC, PROCEEDINGS, 2nd International Conference on ASIC :191-193 DOI Author Url Publisher Url
Ma J, Zhang WD, Zhang JF, Ji Z, Benbakhti B, Franco J, Mitard J, Witters L, Collaert N, Groeseneken G. AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction 2015 Symposium on VLSI Technology Digest of Technical Papers, 2015 SYMPOSIUM ON VLSI TECHNOLOGY :T34-T35 DOI Author Url Publisher Url Public Url
Hu Z, Chai Z, Zhang W, Zhang JF. Switch-off mechanisms in GeAsTe Ovonic Threshold Switching Selector Device 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Proceedings, 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit :1-4 DOI Publisher Url Public Url
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Xue F, He X, Wang Z, Retamal JRD, Chai Z, Jing L, Zhang C, Fang H, Chai Y, Jiang T, Zhang W, Alshareef HN, Ji Z, Li L, He J, Zhang X. 2021. Ferroelectric Switching: Giant Ferroelectric Resistance Switching Controlled by a Modulatory Terminal for Low‐Power Neuromorphic In‐Memory Computing (Adv. Mater. 21/2021) Advanced Materials, 33 DOI Publisher Url